Publications by authors named "Somayeh Saadat Niavol"
Article Synopsis
- * Introducing low concentrations of WO (1-4 atom %) in the indium oxide films improves stoichiometry, allowing the devices to turn off reliably and providing stability in threshold voltage.
- * The ALD IWO FETs show impressive characteristics, such as a low subthreshold slope of 67 mV/decade, minimal hysteresis, enhanced tunability of threshold voltage, and excellent performance even at sub-100 nm channel lengths, making them ideal for advanced
