SET Kinetics of Ag/HfO-Based Diffusive Memristors under Various Counter-Electrode Materials.

The counter-electrode (CE) material in electrochemical metallization memory (ECM) cells plays a crucial role in the switching process by affecting the reactions at the CE/electrolyte interface. This is due to the different electrocatalytic activity of the CE material towards reduction-oxidation reactions, which determines the metal ion concentration in the electrolyte and ultimately impacts the switching kinetics. In this study, the focus is laid on Pt, TiN, and W, which are relevant in standard chip technology.

Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes.

The origins of the nonlinear and asymmetric synaptic characteristics of TiO -based synapse devices were investigated. Based on the origins, a microstructural electrode was utilized to improve the synaptic characteristics. Under an identical pulse bias, a TiO -based synapse device exhibited saturated conductance changes, which led to nonlinear and asymmetric synaptic characteristics.

A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application.

In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (I/I > 10), an extremely low off-current (∼1 nA), an extremely fast operating speed of <10 ns (transition time of <2 ns and delay time of <8 ns), high endurance (10), and high thermal stability (>450 °C). The observed high thermal stability is caused by the relatively small atomic size of C, compared to Te, which can effectively suppress the segregation and crystallization of Te in the OTS film.