Recent advancements in phase-change memory (PCM) technology have predominantly stemmed from material-level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device-level electrothermal solutions. Thus, the concept of a 3D heater-all-around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed.
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