Strong In-Plane Magnetization and Spin Polarization in (CoFe)GeTe/Graphene van der Waals Heterostructure Spin-Valve at Room Temperature.

Van der Waals (vdW) magnets are promising, because of their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, so far, most of the vdW magnet-based spintronic devices have been limited to cryogenic temperatures with magnetic anisotropies favoring out-of-plane or canted orientation of the magnetization. Here, we report beyond room-temperature lateral spin-valve devices with strong in-plane magnetization and spin polarization of the vdW ferromagnet (CoFe)GeTe (CFGT) in heterostructures with graphene.

A hexagon based Mn(II) rod metal-organic framework - structure, SF gas sorption, magnetism and electrochemistry.

A manganese(II) metal-organic framework based on the hexatopic hexakis(4-carboxyphenyl)benzene, cpb: [Mn(cpb)(dmf)], was solvothermally prepared showing a Langmuir area of 438 m g, rapid uptake OF sulfur hexafluoride (SF) as well as electrochemical and magnetic properties, while single crystal diffraction reveals an unusual rod-MOF topology.

A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe GeTe /Graphene Heterostructure.

The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe GeTe in heterostructures with graphene is demonstrated.

Unusual Magnetic Features in Two-Dimensional FeGeTe Induced by Structural Reconstructions.

Recent experiments on FeGeTe suggested the presence of a symmetry breaking of its conventional crystal structure. Here, using density functional theory calculations, we elucidate that the stabilization of the (√3 × √3)30° supercell structure is caused by the swapping of Fe atoms occurring in the monolayer limit. The swapping to the vicinity of Te atoms is facilitated by the spontaneous occurrence of Fe vacancy and its low diffusion barrier.