Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Compositions.

We present electrical properties of Schottky barrier diodes on room-temperature deposited amorphous zinc-tin-oxide (ZTO) with Zn/(Zn + Sn) contents between 0.12 and 0.72.

Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete.