Altermagnetic lifting of Kramers spin degeneracy.

Lifted Kramers spin degeneracy (LKSD) has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, LKSD has been considered to originate from two possible internal symmetry-breaking mechanisms.

High harmonic generation enhanced by magnetic dipole resonance in an amorphous silicon metasurface.

We report on the enhancement of high harmonic generation (HHG) yield in a metasurface consisting of amorphous silicon disks in a periodic array on an insulator substrate. The structure was designed and optimized using the finite-difference time-domain method for the maximum enhancement, which reaches the factor of 20-times compared to the unstructred surface. The local field is enhanced by a broadband magnetic resonance mode allowing to use ultrashort laser pulses with Fourier transform limit down to 40 fs.

Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor.

The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a noncollinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure.

Ultrashort spin-orbit torque generated by femtosecond laser pulses.

To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance.

Ceramic-Chromium Hall Sensors for Environments with High Temperatures and Neutron Radiation.

Ceramic-chromium Hall sensors represent a temperature and radiation resistant alternative to Hall sensors based on semiconductors. Demand for these sensors is presently motivated by the ITER and DEMO nuclear fusion projects. The developed ceramic-chromium Hall sensors were tested up to a temperature of 550 °C and a magnetic field of 14 T.

Imaging and writing magnetic domains in the non-collinear antiferromagnet MnSn.

Non-collinear antiferromagnets are revealing many unexpected phenomena and they became crucial for the field of antiferromagnetic spintronics. To visualize and prepare a well-defined domain structure is of key importance. The spatial magnetic contrast, however, remains extraordinarily difficult to be observed experimentally.

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet.

Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with electrical writing and reading is one of the central topics of antiferromagnetic spintronics. So far, such a combined functionality has been demonstrated via 90° reorientations of the Néel vector generated by the current-induced spin orbit torque and sensed by the linear-response anisotropic magnetoresistance.

Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses.

Domain wall motion driven by ultra-short laser pulses is a pre-requisite for envisaged low-power spintronics combining storage of information in magnetoelectronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study, we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations.

Study of Mn interstitials in (Ga, Mn)As using high-resolution x-ray diffraction.

We present a method for the determination of the concentration of Mn ions in nonequivalent interstitial positions in the lattice of (Ga, Mn)As. The Mn ions occupy substitutional and/or interstitial positions in the GaAs lattice and the dependence of the structure factor on their concentration differs for various diffractions and for different positions in the lattice. We measured several diffractions including weak diffractions, which are very sensitive to the Mn content.

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As.

We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible Mn(Ga) dopings. The material synthesis was optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blueshift for increasing Mn doping.