Thin film encapsulation for quantum dot light-emitting diodes using a-SiN :H/SiO N /hybrid SiO barriers.

A facile thin film encapsulation (TFE) method having a triple-layered structure of a-SiN :H/SiO N /hybrid SiO (ASH) on QD-LEDs was performed utilizing both reproducible plasma-enhanced chemical vapor deposition (PECVD) and simple dip-coating processes without adopting atomic layer deposition (ALD). The ASH films fabricated on a polyethylene terephthalate (PET) substrate show a high average transmittance of 88.80% in the spectral range of 400-700 nm and a water vapor transmission rate (WVTR) value of 7.