Direct visualization of relativistic quantum scars in graphene quantum dots.

Quantum scars refer to eigenstates with enhanced probability density along unstable classical periodic orbits. First predicted 40 years ago, scars are special eigenstates that counterintuitively defy ergodicity in quantum systems whose classical counterpart is chaotic. Despite the importance and long history of scars, their direct visualization in quantum systems remains an open field.

Extreme electron-hole drag and negative mobility in the Dirac plasma of graphene.

Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of electron-hole drag in the Planckian plasma that develops in monolayer graphene in the vicinity of its Dirac point above liquid-nitrogen temperatures. The frequent electron-hole scattering forces minority carriers to move against the applied electric field due to the drag induced by majority carriers.

In-plane staging in lithium-ion intercalation of bilayer graphene.

The ongoing efforts to optimize rechargeable Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been demonstrated recently but the mechanisms underpinning the storage capacity remain poorly understood. Here, using magnetotransport measurements, we report in-operando intercalation dynamics of bilayer graphene.

Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the Linear Magnetoresistance.

Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here, we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for graphene laminates allows for high intrinsic mobility and the simultaneous control of doping type (- and -) and concentration over a wide range. We establish that the intraflake mobility is high by observing a linear magnetoresistance of such solution-processed graphene laminates and using it to devolve the interflake tunneling and intralayer magnetotransport.

High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices.

Twist-controlled moiré superlattices (MSs) have emerged as a versatile platform for realizing artificial systems with complex electronic spectra. The combination of Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) can give rise to an interesting MS, which has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and the electronic ratchet effect. Yet, the understanding of the electronic properties of BLG/hBN MS has, at present, remained fairly limited.

Kagome Quantum Oscillations in Graphene Superlattices.

Electronic spectra of solids subjected to a magnetic field are often discussed in terms of Landau levels and Hofstadter-butterfly-style Brown-Zak minibands manifested by magneto-oscillations in two-dimensional electron systems. Here, we present the semiclassical precursors of these quantum magneto-oscillations which appear in graphene superlattices at low magnetic field near the Lifshitz transitions and persist at elevated temperatures. These oscillations originate from Aharonov-Bohm interference of electron waves following open trajectories that belong to a kagome-shaped network of paths characteristic for Lifshitz transitions in the moire superlattice minibands of twistronic graphenes.

Mixing of moiré-surface and bulk states in graphite.

Van der Waals assembly enables the design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices. This twistronics approach has resulted in numerous previously undescribed physics, including strong correlations and superconductivity in twisted bilayer graphene, resonant excitons, charge ordering and Wigner crystallization in transition-metal chalcogenide moiré structures and Hofstadter's butterfly spectra and Brown-Zak quantum oscillations in graphene superlattices. Moreover, twistronics has been used to modify near-surface states at the interface between van der Waals crystals.

Giant orbital magnetic moments and paramagnetic shift in artificial relativistic atoms and molecules.

Materials such as graphene and topological insulators host massless Dirac fermions that enable the study of relativistic quantum phenomena. Single quantum dots and coupled quantum dots formed with massless Dirac fermions can be viewed as artificial relativistic atoms and molecules, respectively. Such structures offer a unique testbed to study atomic and molecular physics in the ultrarelativistic regime (particle speed close to the speed of light).

Out-of-equilibrium criticalities in graphene superlattices.

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy, whereas the filled bands underneath contribute little to conduction. Here, we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity.

Control of Giant Topological Magnetic Moment and Valley Splitting in Trilayer Graphene.

Bloch states of electrons in honeycomb two-dimensional crystals with multivalley band structure and broken inversion symmetry have orbital magnetic moments of a topological nature. In crystals with two degenerate valleys, a perpendicular magnetic field lifts the valley degeneracy via a Zeeman effect due to these magnetic moments, leading to magnetoelectric effects which can be leveraged for creating valleytronic devices. In this work, we demonstrate that trilayer graphene with Bernal stacking (ABA TLG), hosts topological magnetic moments with a large and widely tunable valley g factor (g_{ν}), reaching a value g_{ν}∼1050 at the extreme of the studied parametric range.

Out-of-Plane Dielectric Susceptibility of Graphene in Twistronic and Bernal Bilayers.

We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene-both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functional theory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability α = 10.

Electronic phase separation in multilayer rhombohedral graphite.

Of the two stable forms of graphite, hexagonal and rhombohedral, the former is more common and has been studied extensively. The latter is less stable, which has so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality rhombohedral graphite films up to 50 graphene layers thick and study their transport properties.

Publisher Correction: Control of electron-electron interaction in graphene by proximity screening.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Control of electron-electron interaction in graphene by proximity screenings.

Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measure the electron-electron scattering length in graphene and report qualitative deviations from the standard behavior.

Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite.

Rhombohedral graphite features peculiar electronic properties, including persistence of low-energy surface bands of a topological nature. Here, we study the contribution of electron-hole excitations toward inelastic light scattering in thin films of rhombohedral graphite. We show that, in contrast to the featureless electron-hole contribution toward Raman spectrum of graphitic films with Bernal stacking, the inelastic light scattering accompanied by electron-hole excitations in crystals with rhombohedral stacking produces distinct features in the Raman signal which can be used both to identify the stacking and to determine the number of layers in the film.

Magnetoresistance in Co-hBN-NiFe Tunnel Junctions Enhanced by Resonant Tunneling through Single Defects in Ultrathin hBN Barriers.

Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs.

Transport Through a Network of Topological Channels in Twisted Bilayer Graphene.

We explore a network of electronic quantum valley Hall states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements, we observe Fabry-Pérot and Aharanov-Bohm oscillations that are robust in magnetic fields ranging from 0 to 8 T, which is in strong contrast to more conventional two-dimensional systems where trajectories in the bulk are bent by the Lorentz force. This persistence in magnetic field and the linear spacing in density indicate that charge carriers in the bulk flow in topologically protected, one-dimensional channels.

Electrostatically Induced Quantum Point Contacts in Bilayer Graphene.

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as R ∼ 10 GΩ. This exceeds previously reported values of R = 10-100 kΩ.1-3 We attribute this improvement to the use of a graphite back gate.

Magnetic fluctuations and specific heat in Na(x)CoO2 near a Lifshitz transition.

We analyze the temperature and doping dependence of the specific heat C(T) in Na(x)CoO(2). This material was conjectured to undergo a Lifshitz-type topological transition at x=x(c)=0.62, in which a new electron Fermi pocket emerges at the Γ point, in addition to the existing hole pocket with large k(F).

Charging of graphene by a magnetic field and the mechanical effect of magnetic oscillations.

We discuss the fact that the quantum capacitance of graphene-based devices leads to variation of graphene charge density under changes of external magnetic field. The charge is conserved, but redistributes to the substrate or other graphene sheets. We derive an exact analytic expression for charge redistribution in the case of ideal graphene in a strong magnetic field.