Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric HfZrO Film.

The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this material have a complex nature, and despite the high speed of internal switching, the real speed can deteriorate significantly due to various external reasons. In this work, we reveal that the domain structure and the dielectric layer formed at the electrode interface contribute significantly to the polarization switching speed of 10 nm thick HfZrO (HZO) film.

[Current etiological structure of acute viral hepatitis in children].

The etiological structure of viral hepatitides (VH) was defined in 345 children admitted to the clinic during one year with a diagnosis of acute viral hepatitis. It was established on the basis of clinico-laboratory studies and identification of serological markers of viral hepatitides A, B and delta. It has been demonstrated that in the structure of viral hepatitides in children living in Moscow, VHA accounts for 83.