Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories.

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance-voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or high-k/SiO interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash.

Subjective symptoms of carpal tunnel syndrome correlate more with psychological factors than electrophysiological severity.

Aim: Carpal tunnel syndrome (CTS) is the most common entrapment neuropathy and is one of the most common requests for electrodiagnosis. We aimed to note the relationship of subjective symptom severity of CTS, with objective electrophysiological severity and psychological status of patients.

Patients And Methods: One hundred and forty-four consecutive patients of CTS referred to neurophysiology laboratory of a tertiary care hospital over 1 year were prospectively studied.