Oxidation-induced modulation of photoresponsivity in monolayer MoS with sulfur vacancies.

Two-dimensional transition metal dichalcogenides (TMDs), such as MoS, hold great promise for next-generation electronics and optoelectronics due to their unique properties. However, the ultrathin nature of these materials renders them vulnerable to structural defects and environmental factors, which significantly impact their performance. Sulfur vacancies (V) are the most common intrinsic defects in MoS, and their impact on device performance in oxidising environments remains understudied.