Oxidation-induced modulation of photoresponsivity in monolayer MoS with sulfur vacancies.

Two-dimensional transition metal dichalcogenides (TMDs), such as MoS, hold great promise for next-generation electronics and optoelectronics due to their unique properties. However, the ultrathin nature of these materials renders them vulnerable to structural defects and environmental factors, which significantly impact their performance. Sulfur vacancies (V) are the most common intrinsic defects in MoS, and their impact on device performance in oxidising environments remains understudied.

CVD-Grown Monolayer MoS and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum.

Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS/GaN) epitaxial heterostructure.