μ-EXAFS, μ-XRF, and μ-PL characterization of a multi-quantum-well electroabsorption modulated laser realized via selective area growth.

In the past few years, strong efforts have been devoted to improving the frequency of optical-fiber communications. In particular, the use of a special kind of integrated optoelectronic device called an electroabsorption modulated laser (EML) allows communication at 10 Gb s(-1) or higher over long propagation spans (up to 80 km). Such devices are realized using the selective area growth (SAG) technique and are based on a multiple quantum well (MQW) distributed-feedback laser (DFB) monolithically integrated with a MQW electroabsorption modulator (EAM).