Gatemon Qubit on a Germanium Quantum-Well Heterostructure.

Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts.

Strong coupling between a photon and a hole spin in silicon.

Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbour quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible metal-oxide-semiconductor fabrication process.

Mobility Enhancement in Graphene by in situ Reduction of Random Strain Fluctuations.

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain.

In Situ Strain Tuning in hBN-Encapsulated Graphene Electronic Devices.

Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experiments. In addition, the on-substrate approach allows one to exploit strain effects in the full range of possible sample geometries and at the same time guarantees that changes in the gate capacitance remain negligible during the deformation process.

New Generation of Moiré Superlattices in Doubly Aligned hBN/Graphene/hBN Heterostructures.

The specific rotational alignment of two-dimensional lattices results in a moiré superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of such superlattices have been reported for graphene/hBN and graphene/graphene systems. Here we report moiré superlattices in fully hBN encapsulated graphene with both the top and the bottom hBN aligned to the graphene.

GHz nanomechanical resonator in an ultraclean suspended graphene p-n junction.

We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model.

Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene p-n Junction.

We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying the microwave absorption in fully suspended clean bilayer graphene p-n junctions in the frequency range of 1-5 GHz at a temperature of 8 K. We observe a distinct photocurrent signal if the device is gated into the p-n regime, while there is almost no signal for unipolar doping in either the n-n or p-p regimes. Most surprisingly, the photocurrent strongly peaks when one side of the junction is gated to the Dirac point (charge-neutrality point CNP), while the other remains in a highly doped state.

Guiding of Electrons in a Few-Mode Ballistic Graphene Channel.

In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied.