Enhanced second-harmonic generation from double resonant plasmonic antennae.

We present a novel plasmonic antenna geometry - the double resonant antenna (DRA) - that is optimized for second-harmonic generation (SHG). This antenna is based on two gaps coupled to each other so that a resonance at the fundamental and at the doubled frequency is obtained. Furthermore, the proximity of the localized hot spots allows for a coupling and spatial overlap between the two field enhancements at both frequencies.

Sub-100 fs single-walled carbon nanotube saturable absorber mode-locked Yb-laser operation near 1 microm.

Transmission- and reflection-type single-walled carbon nanotube saturable absorbers (SWCNT-SAs) were designed and fabricated for passive mode-locking of bulk lasers in the 1 microm spectral range. Mode-locked laser operation based on a diffusion-bonded Yb:KYW/KYW crystal was demonstrated, and pulses as short as 83 fs and 140 fs were achieved applying reflection-type and transmission-type SWCNT-SA, respectively. The nonlinear parameters of the absorbers were measured to be in close vicinity to those of a semiconductor saturable absorber mirror for the same wavelength range.

Thin-disk Yb:KLu(WO(4))(2) laser with single-pass pumping.

Single-pass pumping of a thin disk consisting of an only 50 microm thick epitaxial layer of 32 at.% Yb-doped KLu(WO(4))(2) grown on a 0.35 mm thick undoped KLu(WO(4))(2) substrate is demonstrated.

Passive mode locking of Yb:KLuW using a single-walled carbon nanotube saturable absorber.

Mode locking of an Yb-doped bulk laser in the 1 microm spectral range using a single-walled carbon nanotube saturable absorber (SWCNT-SA) is demonstrated for the first time, to our knowledge. Passive mode locking of an Yb:KLuW laser resulted in nearly transform-limited pulses as short as 115 fs at 1048 nm. In addition, the nonlinear response of the SWCNT-SA was measured, yielding a modulation depth of 0.

Segmented grown Yb:KY(WO(4))(2)/KY(WO(4))2(2) for use in continuous-wave and mode-locked lasers.

Segmented growth of monoclinic Yb:KY(WO(4))(2) on KY(WO(4))2(2) substrates was successfully implemented and its excellent laser performance demonstrated. High slope efficiencies up to 80% and an output power of 375 mW were achieved under Ti:sapphire laser pumping in the continuous-wave regime. In the passively mode-locked regime, pulses as short as 99 fs with an average output power of 69 mW were obtained.

Ultrashort pulse Yb:LaSc(3)(BO(3))(4) mode-locked oscillator.

Passive mode-locked laser operation based on an Yb-doped lanthanum scandium borate crystal is demonstrated. Pulse durations as short as 58 fs and 67 fs were achieved applying a Ti:sapphire- and a diode-laser pump source, respectively. The average output powers were 73 mW and 39 mW at a repetition rate of 90 MHz.

Passively mode-locked Yb:LuVO(4) oscillator.

Passive mode locking of the ytterbium doped orthovanadate crystal Yb:LuVO(4) is reported for the first time. We demonstrate what we believe to be the shortest pulses directly generated with an Yb-doped crystalline laser using a semiconductor saturable absorber. The pulses at 1036 nm have a duration as short as 58 fs for an average power of 85 mW.

Yb-doped KY(WO4)2 planar waveguide laser.

High-quality monoclinic KY(WO4)2 optical waveguides were grown by liquid-phase epitaxy, and laser operation of an Yb-doped KY(WO4)2 waveguide was demonstrated for the first time to our knowledge. Continuous-wave laser emission near 1 microm was achieved with both surface and buried planar waveguides. An output power of 290 mW was obtained in the fundamental mode and the slope efficiency was above 80%.

Mode-locked laser operation of epitaxially grown Yb:Klu(WO4)2 composites.

Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 microm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of 114 fs have been achieved for an average power of 31 mW at 1030 nm.