The effects of using ALD-grown ZnO buffer layers on the properties of indium tin oxide grown by chemical solution deposition.

In comparison to ITO films prepared by chemical solution deposition on bare substrates, the use of a ZnO buffer layer and Al2O3 barrier layer has been shown to have a significant effect on morphology, measured sheet resistance and therefore resistivity. In the case of quartz substrates, ITO resistivity decreased from 9.6 x 10(-3) ohms cm to 4.

Conductive-probe atomic force microscopy characterization of silicon nanowire.

The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures.

Direct measurement of the binding energy and bohr radius of a single hydrogenic defect in a semiconductor quantum well.

Low-temperature scanning tunneling spectroscopy under ultrahigh vacuum was used to study donor point defects located at the epitaxial surface of an In(0.53)Ga(0.47)As quantum well.