Stoichiometry modulates the optoelectronic functionality of zinc phosphide (ZnP).

Predictive synthesis-structure-property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the performance of devices based on these materials. In this work, we investigate the effect of stoichiometry variations and defects on the structural and optoelectronic properties of monocrystalline zinc phosphide (ZnP), a promising compound for photovoltaic applications.

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide.

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor-liquid-solid and selective area epitaxy growth approaches applied to zinc phosphide (ZnP), an earth-abundant absorber material, is presented.

Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber.

Zinc phosphide, ZnP, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of solar cell alternatives to the silicon market. Here we provide a thorough study of the optical properties of single crystalline ZnP thin films grown on (100) InP by molecular beam epitaxy.

Rotated domains in selective area epitaxy grown ZnP: formation mechanism and functionality.

Zinc phosphide (ZnP) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. It is possible to overcome these factors by obtaining the material as nanostructures, the selective area epitaxy approach, enabling additional strain relaxation mechanisms and minimizing the interface area. We demonstrate that ZnP nanowires grow mostly defect-free when growth is oriented along the [100] and [110] of the crystal, which is obtained in nanoscale openings along the [110] and [010] on InP(100).

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning.

Large-scale deployment of thin-film photovoltaics will be facilitated through earth-abundant components. Herein, selective area epitaxy and lateral overgrowth epitaxy are explored for the growth of zinc phosphide (ZnP), a promising earth-abundant absorber. The ideal growth conditions are elucidated, and the nucleation of single-crystal nanopyramids that subsequently evolve towards coalesced thin-films is demonstrated.

Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (ZnP) nanowires.

Earth-abundant and low-cost semiconductors, such as zinc phosphide (ZnP), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and controllable doping are challenging drawbacks that restrain device performance. Better assessment of relevant properties such as structure, crystal quality and defects will allow faster advancement of ZnP, and in this sense, Raman spectroscopy can play an invaluable role.

Heterotwin ZnP superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties.

Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cells due to the combination of suitable optoelectronic properties and an abundance of the constituting elements in the Earth's crust. The generation of periodic superstructures along the nanowire axis could provide an additional mechanism to tune their functional properties. Here we present the vapour-liquid-solid growth of zinc phosphide superlattices driven by periodic heterotwins.