Publications by authors named "Simeon Trendafilov"

In this paper, we demonstrate a straightforward, low-cost, and high resolution optical-based method to measure the three-dimensional relative electric field magnitude in microwave circuits without the need to monitor reflected laser beams or the requirement of photoconductive substrates for the device under test. The technique utilizes optically induced conductance, where a focused laser beam excites electron-hole-pairs (EHPs) in a semiconductor thin film placed in the near-field of a microwave circuit. The generated EHPs create localized loss in the resonator and modulate the transmitted microwave signal, proportional to the local microwave electric field.

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Semiconductor nanowire arrays have been demonstrated as promising candidates for nanoscale optoelectronics applications due to their high detectivity as well as tunable photoresponse and bandgap over a wide spectral range. In the infrared (IR), where these attributes are more difficult to obtain, nanowires will play a major role in developing practical devices for detection, imaging and energy harvesting. Due to their geometry and periodic nature, vertical nanowire and nanopillar devices naturally lend themselves to waveguide and photonic crystal mode engineering leading to multifunctional materials and devices.

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Highly compact, filter-free multispectral photodetectors have important applications in biological imaging, face recognition, and remote sensing. In this work, we demonstrate room-temperature wavelength-selective multipixel photodetectors based on GaAsSb nanowire arrays grown by metalorganic vapor phase epitaxy, providing more than 10 light detection channels covering both visible and near-infrared ranges without using any optical filters. The nanowire array geometry-related tunable spectral photoresponse has been demonstrated both theoretically and experimentally and shown to be originated from the strong and tunable resonance modes that are supported in the GaAsSb array nanowires.

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Strong interaction of graphene with light accounts for one of its most remarkable properties: the ability to absorb 2.3% of the incident light's energy within a single atomic layer. Free carrier injection via field-effect gating can dramatically vary the optical properties of graphene, thereby enabling fast graphene-based modulators of the light intensity.

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Laser induced periodic surface structures (LIPSS or ripples) were generated on single crystal germanium after irradiation with multiple 3 µm femtosecond laser pulses at a 45° angle of incidence. High and low spatial frequency LIPSS (HSFL and LSFL, respectively) were observed for both s- and p-polarized light. The measured LSFL period for p-polarized light was consistent with the currently established LIPSS origination model of coupling between surface plasmon polaritons (SPP) and the incident laser pulses.

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Laser-induced femtosecond damage thresholds of Au and Ag coated pulse compression gratings were measured using 800 nm laser pulses ranging in duration from 30 to 200 fs. These gratings differ from conventional metal-on-photoresist pulse compression gratings in that the gratings patterns are generated by etching the fused silica substrate directly. After etching, the metal overcoating was optimized based on diffraction efficiency and damage threshold considerations.

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The inversionless free-electron laser having a drift region consisting of two magnets is analyzed. Performing numerical simulations of electron motion inside wigglers and the drift region, we have shown that this system has a positive mean gain over the entire energy distribution of the electron beam. We study the influence of emittance and the spread of electron energies on the gain.

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