Chemical Composition Control at the Substrate Interface as the Key for FeSe Thin-Film Growth.

The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches toward inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser deposition that determine FeSe thin-film growth and focuses on the film/substrate interface, which has only been considered hypothetically in the past literature. The FeSe/MgO interface has been assumed (1) to be clean and (2) to obey lattice-matching epitaxy.

Challenges for Pulsed Laser Deposition of FeSe Thin Films.

Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on a few occasions. In pulsed laser deposition, the main challenges can be attributed to such factors as controlling film stoichiometry (i.

In-situ growth of superconducting SmOFFeAs thin films by pulsed laser deposition.

Oxypnictide thin film growth by pulsed laser deposition (PLD) is one of many insufficiently resolved issues in the research of iron-based superconductors. Here we report on the successful realization of superconducting SmOFFeAs oxypnictide thin film growth by in-situ PLD on CaF (fluorite) substrates. CaF acts as fluorine supplier by diffusion and thus enables superconducting oxypnictide thin film growth by PLD.

Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films.

Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe(1-x)Te(x) seed layer for subsequent homoepitaxial growth of superconducting FeSe(1-x)Te(x) thin film on MgO substrates.