Nonoperative Management of Iatrogenic Right Atrial Appendage Pseudoaneurysm During Catheter Ablation.

Atrial pseudoaneurysms are exceedingly rare. Cardiac pseudoaneurysms are at risk for rupture, which may be catastrophic and require emergent thoracotomy for definitive treatment. We report a case of right atrial appendage perforation during catheter ablation leading to tamponade and right atrium pseudoaneurysm.

Sorry to ask but … how is apology effectiveness dependent on apology content and gender?

While it is well understood that the content included in an apology matters, what constitutes an effective apology may differ depending on the gender of the person delivering it. In this article, we test competing theoretical perspectives (i.e.

Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma.

The understanding of ion dynamics in plasma applications has received significant attention. In this study, we examined these effects between He and Ar species, focusing on the Ar ion flux on the substrate. To control heterogeneous collisions, we varied the He addition rate at fixed chamber pressure and the chamber pressure at fixed Ar/He ratio in an inductively coupled Ar/He plasma source.

Characterization of SiO Plasma Etching with Perfluorocarbon (CF and CF) and Hydrofluorocarbon (CHF and CHF) Precursors for the Greenhouse Gas Emissions Reduction.

This paper proposes the use of environmentally friendly alternatives, CF and CHF, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO plasma etching, instead of conventional precursors CF and CHF. The study employs scanning electron microscopy for etch profile analysis and quadrupole mass spectrometry for plasma diagnosis. Ion bombardment energy at the etching conditions is determined through self-bias voltage measurements, while densities of radical species are obtained using quadrupole mass spectroscopy.

Contribution of Ion Energy and Flux on High-Aspect Ratio SiO Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/CF Plasma: Individual Ion Energy and Flux Controlled.

As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspect ratio SiO2 etching characteristics for various trench widths in a dual-frequency capacitively coupled plasma system with Ar/C4F8 gases. We established an individual control window of ion flux and energy by adjusting dual-frequency power sources and measuring the electron density and self-bias voltage.

On the Quenching of Electron Temperature in Inductively Coupled Plasma.

Electron temperature has attracted great attention in plasma processing, as it dominates the production of chemical species and energetic ions that impact the processing. Despite having been studied for several decades, the mechanism behind the quenching of electron temperature with increasing discharge power has not been fully understood. In this work, we investigated the quenching of electron temperature in an inductively coupled plasma source using Langmuir probe diagnostics, and suggested a quenching mechanism based on the skin effect of electromagnetic waves within local- and non-local kinetic regimes.

Determination of Plasma Potential Using an Emissive Probe with Floating Potential Method.

Despite over 90 years of study on the emissive probe, a plasma diagnostic tool used to measure plasma potential, its underlying physics has yet to be fully understood. In this study, we investigated the voltages along the hot filament wire and emitting thermal electrons and proved which voltage reflects the plasma potential. Using a circuit model incorporating the floating condition, we found that the lowest potential on the plasma-exposed filament provides a close approximation of the plasma potential.

Development of the Tele-Measurement of Plasma Uniformity via Surface Wave Information (TUSI) Probe for Non-Invasive In-Situ Monitoring of Electron Density Uniformity in Plasma Display Fabrication Process.

The importance of monitoring the electron density uniformity of plasma has attracted significant attention in material processing, with the goal of improving production yield. This paper presents a non-invasive microwave probe for in-situ monitoring electron density uniformity, called the Tele-measurement of plasma Uniformity via Surface wave Information (TUSI) probe. The TUSI probe consists of eight non-invasive antennae and each antenna estimates electron density above the antenna by measuring the surface wave resonance frequency in a reflection microwave frequency spectrum (S11).

Are We Essential, or Sacrificial? The Effects of Felt Public Gratitude on Essential Worker Recovery Activities During COVID-19.

COVID-19 has been characterized by unprecedented levels of public gratitude to some, but not all, essential workers. In this research, we integrate insights from the stigmatized occupations and gratitude literature to build theory on the positive negative relationships between such displays of public gratitude and essential workers' recovery activities. We argue that felt public gratitude positively relates to recovery activities (e.

Observation of prior light emission before arcing development in a low-temperature plasma with multiple snapshot analysis.

Arcing is a ubiquitous phenomenon and a crucial issue in high-voltage applied systems, especially low-temperature plasma (LTP) engineering. Although arcing in LTPs has attracted interest due to the severe damage it can cause, its underlying mechanism has yet to be fully understood. To elucidate the arcing mechanism, this study investigated various signals conventionally used to analyze arcing such as light emission, arcing current and voltage, and background plasma potential.

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma.

Recently, the uniformity in the wafer edge area that is normally abandoned in the fabrication process has become important for improving the process yield. The wafer edge structure normally has a difference of height between wafer and electrode, which can result in a sheath bend, distorting important parameters of the etch, such as ionic properties, resulting in nonuniform etching. This problem nowadays is resolved by introducing the supplemented structure called a focus ring on the periphery of the wafer.

Database Development of SiO Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe.

In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other noble gases, namely Kr and Xe, have distinct physical properties such as electron density and temperature, their implementation into plasma etching has not been sufficiently studied. In this work, we conducted SiO etching with FC plasmas diluted with different noble gases, i.

Influence of Additive N on O Plasma Ashing Process in Inductively Coupled Plasma.

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O plasma ashing process in various N/O mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density.

Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing.

Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct wafer bonding have been reported, there is still a lack of deep investigations focusing on the plasma itself. Other than the plasma surface treatment, the wafer bonding process includes multiple steps such as surface cleaning and annealing that require comprehensive studies to maximize the bonding strengths.

Refined Appearance Potential Mass Spectrometry for High Precision Radical Density Quantification in Plasma.

As the analysis of complicated reaction chemistry in bulk plasma has become more important, especially in plasma processing, quantifying radical density is now in focus. For this work, appearance potential mass spectrometry (APMS) is widely used; however, the original APMS can produce large errors depending on the fitting process, as the fitting range is not exactly defined. In this research, to reduce errors resulting from the fitting process of the original method, a new APMS approach that eliminates the fitting process is suggested.

Development of a Noninvasive Real-Time Ion Energy Distribution Monitoring System Applicable to Collisional Plasma Sheath.

As the importance of ion-assisted surface processing based on low-temperature plasma increases, the monitoring of ion energy impinging into wafer surfaces becomes important. Monitoring methods that are noninvasive, real-time, and comprise ion collision in the sheath have received much research attention. However, in spite of this fact, most research was performed in invasive, not real-time, and collisionless ion sheath conditions.

Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO.

As low-temperature plasma plays an important role in semiconductor manufacturing, plasma diagnostics have been widely employed to understand changes in plasma according to external control parameters, which has led to the achievement of appropriate plasma conditions normally termed the process window. During plasma etching, shifts in the plasma conditions both within and outside the process window can be observed; in this work, we utilized various plasma diagnostic tools to investigate the causes of these shifts. Cutoff and emissive probes were used to measure the electron density and plasma potential as indicators of the ion density and energy, respectively, that represent the ion energy flux.

Development of a High-Linearity Voltage and Current Probe with a Floating Toroidal Coil: Principle, Demonstration, Design Optimization, and Evaluation.

As the conventional voltage and current (VI) probes widely used in plasma diagnostics have separate voltage and current sensors, crosstalk between the sensors leads to degradation of measurement linearity, which is related to practical accuracy. Here, we propose a VI probe with a floating toroidal coil that plays both roles of a voltage and current sensor and is thus free from crosstalk. The operation principle and optimization conditions of the VI probe are demonstrated and established via three-dimensional electromagnetic wave simulation.

Development of the Measurement of Lateral Electron Density (MOLE) Probe Applicable to Low-Pressure Plasma Diagnostics.

As the importance of measuring electron density has become more significant in the material fabrication industry, various related plasma monitoring tools have been introduced. In this paper, the development of a microwave probe, called the measurement of lateral electron density (MOLE) probe, is reported. The basic properties of the MOLE probe are analyzed via three-dimensional electromagnetic wave simulation, with simulation results showing that the probe estimates electron density by measuring the surface wave resonance frequency from the reflection microwave frequency spectrum (S11).

A Case of Takotsubo Cardiomyopathy in a Patient With Coronary Artery Fistula.

Takotsubo cardiomyopathy (TTC) is also known as stress-induced cardiomyopathy and mimics acute coronary syndrome in the setting of non-obstructive coronary artery disease. It is associated with reversible left ventricular apical, mid, and/or basal wall motion abnormalities. A coronary artery fistula (CAF) is a connection between one or more of the coronary arteries and the cardiac chamber or great vessel.

Crossing Frequency Method Applicable to Intermediate Pressure Plasma Diagnostics Using the Cutoff Probe.

Although the recently developed cutoff probe is a promising tool to precisely infer plasma electron density by measuring the cutoff frequency (fcutoff) in the S21 spectrum, it is currently only applicable to low-pressure plasma diagnostics below several torr. To improve the cutoff probe, this paper proposes a novel method to measure the crossing frequency (fcross), which is applicable to high-pressure plasma diagnostics where the conventional fcutoff method does not operate. Here, fcross is the frequency where the S21 spectra in vacuum and plasma conditions cross each other.

The positive and negative effects of social status on ratings of voice behavior: A test of opposing structural and psychological pathways.

We examine how social status-the amount of respect and admiration conferred by others-is related to leader ratings of team member voice. In a field study using 373 West Point cadets nested in 60 squads, we find that there are two countervailing pathways linking social status to leader voice ratings: A positive path via instrumental network centrality and a negative path via perceived image risk. In addition, we show that these relationships are contingent upon a relational moderator, such that high-quality team interpersonal relationships weakened the positive indirect effect via instrumental network centrality but strengthened the negative indirect effect via image risk.

Characterization of SiO Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas.

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias.

Prognostic Utility of Right Ventricular Remodeling Over Conventional Risk Stratification in Patients With COVID-19.

Background: Coronavirus disease 2019 (COVID-19) is a growing pandemic that confers augmented risk for right ventricular (RV) dysfunction and dilation; the prognostic utility of adverse RV remodeling in COVID-19 patients is uncertain.

Objectives: The purpose of this study was to test whether adverse RV remodeling (dysfunction/dilation) predicts COVID-19 prognosis independent of clinical and biomarker risk stratification.

Methods: Consecutive COVID-19 inpatients undergoing clinical transthoracic echocardiography at 3 New York City hospitals were studied; images were analyzed by a central core laboratory blinded to clinical and biomarker data.

Hydration Characteristics of Low-Heat Cement Substituted by Fly Ash and Limestone Powder.

This study proposed a new binder as an alternative to conventional cement to reduce the heat of hydration in mass concrete elements. As a main cementitious material, low-heat cement (LHC) was considered, and then fly ash (FA), modified FA (MFA) by vibrator mill, and limestone powder (LP) were used as a partial replacement of LHC. The addition of FA delayed the induction period at the hydration heat curve and the maximum heat flow value () increased compared with the LHC based binder.