A comprehensive study on electron and hole transport layers for designing and optimizing the efficiency of MoSe-Based solar cells using numerical simulation techniques.

Researchers have recently shown a great deal of interest in molybdenum diselenide (MoSe)-based solar cells due to their outstanding semiconducting characteristics. However, discrepancies in the band arrangement at the MoSe/ETL (electron transport layer) and hole transport layer (HTL)/MoSe interfaces impede performances. In this research, a device combination with Ag/FTO/ETL/MoSe/HTL/Ni is employed, where 7 HTLs and 3 different ETLs have been utilized to explore which device arrangement is superior.

Numerical analysis and device modelling of a lead-free SrPI/SrSbI double absorber solar cell for enhanced efficiency.

Halide perovskites are the most promising options for extremely efficient solar absorbers in the field of photovoltaic (PV) technology because of their remarkable optical qualities, increased efficiency, lightweight design, and affordability. This work examines the analysis of a dual-absorber solar device that uses SrSbI as the bottom absorber layer and SrPI as the top absorber layer of an inorganic perovskite through the SCAPS-1D platform. The device architecture includes ZnSe as the electron transport layer (ETL), while the active layer consists of SrPI and SrSbI with precise bandgap values.