Harnessing Plasmonic Interference for Nanoscale Ultrafast Electron Sources.

In this Letter we demonstrate the use of plasmonic focusing in conjunction with nonlinear photoemission to develop geometrically flat nanoscale electron sources with less than 40 pm-rad root mean squared (rms) normalized transverse emittance. Circularly polarized light is incident on a gold Archimedean spiral structure to generate surface-plasmon polaritons that interfere coherently at the center resulting in a 50 nm rms emission area. Such a nanostructured flat surface enables simultaneous spatiotemporal confinement of emitted electrons at the nanometer and femtosecond level and can be used as an advanced electron source for high-repetition-rate ultrafast electron diffraction and microscopy experiments as well as the next generation of miniaturized particle accelerators.

A cryogenically cooled 200 kV DC photoemission electron gun for ultralow emittance photocathodes.

Novel photocathode materials like ordered surfaces of single crystal metals, epitaxially grown high quantum efficiency thin films, and topologically non-trivial materials with dirac cones show great promise for generating brighter electron beams for various accelerator and ultrafast electron scattering applications. Despite several materials being identified as brighter photocathodes, none of them have been tested in electron guns to extract electron beams due to technical and logistical challenges. In this paper, we present the design and commissioning of a cryocooled 200 kV DC electron gun that is capable of testing a wide variety of novel photocathode materials over a broad range of temperatures from 298 to 35 K for bright electron beam generation.

Ultracold Electrons via Near-Threshold Photoemission from Single-Crystal Cu(100).

Achieving a low mean transverse energy or temperature of electrons emitted from the photocathode-based electron sources is critical to the development of next-generation and compact x-ray free electron lasers and ultrafast electron diffraction, spectroscopy, and microscopy experiments. In this Letter, we demonstrate a record low mean transverse energy of 5 meV from the cryo-cooled (100) surface of copper using near-threshold photoemission. Further, we also show that the electron energy spread obtained from such a surface is less than 11.

Reduction of Intrinsic Electron Emittance from Photocathodes Using Ordered Crystalline Surfaces.

The generation of intense electron beams with low emittance is key to both the production of coherent x rays from free electron lasers, and electron pulses with large transverse coherence length used in ultrafast electron diffraction. These beams are generated today by photoemission from disordered polycrystalline surfaces. We show that the use of single crystal surfaces with appropriate electronic structures allows us to effectively utilize the physics of photoemission to generate highly directed electron emission, thus reducing the emittance of the electron beam being generated.

Review and demonstration of ultra-low-emittance photocathode measurements.

This paper reports the development of a simple and reliable apparatus for measuring ultra-low emittance, or equivalently the mean transverse energy from cryogenically cooled photocathodes. The existing methods to measure ultra-low emittance from photocathodes are reviewed. Inspired by the available techniques, we have implemented two complementary methods, the waist scan and voltage scan, in one system giving consistent results.

2-D energy analyzer for low energy electrons.

A 2-D electron energy analyzer is designed and constructed to measure the transverse and longitudinal energy distribution of low energy (<1 eV) electrons. The analyzer operates on the principle of adiabatic invariance and motion of low energy electrons in a strong longitudinal magnetic field. The operation of the analyzer is studied in detail and a design to optimize the energy resolution, signal to noise ratio, and physical size is presented.

Ultrabright and ultrafast III-V semiconductor photocathodes.

Crucial photoemission properties of layered III-V semiconductor cathodes are predicted using Monte Carlo simulations. Using this modeling, a layered GaAs structure is designed to reduce simultaneously the transverse energy and response time of the emitted electrons. This structure, grown by molecular beam epitaxy and activated to negative electron affinity, is characterized.