Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy.

This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor-solid-liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst droplet. Arsenic exhibits limited solubility in conventional catalysts; however, this research explores an alternative scenario in which lead serves as a solvent for arsenic, while gallium and lead are immiscible liquids.

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates.

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask.

Kinetic broadening of size distribution in terms of natural versus invariant variables.

We study theoretically the size distributions of nanoparticles (islands, droplets, nanowires) whose time evolution obeys the kinetic rate equations with size-dependent condensation and evaporation rates. Different effects are studied which contribute to the size distribution broadening, including kinetic fluctuations, evaporation, nucleation delay, and size-dependent growth rates. Under rather general assumptions, an analytic form of the size distribution is obtained in terms of the natural variable s which equals the number of monomers in the nanoparticle.

Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth.

We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates.

A Low-Threshold Miniaturized Plasmonic Nanowire Laser with High-Reflectivity Metal Mirrors.

A reflectivity-enhanced hybrid plasmonic GaAs/AlGaAs core-shell nanowire laser is proposed and studied by 3D finite-difference time-domain simulations. The results demonstrate that by introducing thin metal mirrors at both ends, the end facet reflectivity of nanowire is increased by 30-140%, resulting in a much stronger optical feedback. Due to the enhanced interaction between the surface charge oscillation and light, the electric field intensity inside the dielectric gap layer increases, resulting in a much lower threshold gain.

Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on silicon.

We present a comparative study of GaAs nanowire growth on Si(111) substrates by molecular beam epitaxy with the assistance of Au and Ag colloidal nanoparticles. Our approach allows the synthesis of nanowires with different catalyst materials in separate sectors of the same substrate within the same epitaxial process. We match the experimental results to the modeling of chemical potentials and nanowire length distributions to analyze the impact of silicon incorporation into the catalyst droplets on the growth rates and size homogeneity in ensembles of Au- and Ag-catalyzed GaAs nanowires.

Performance Enhancement of Ultra-Thin Nanowire Array Solar Cells by Bottom Reflectivity Engineering.

A bottom-reflectivity-enhanced ultra-thin nanowire array solar cell is proposed and studied by 3D optoelectronic simulations. By inserting a small-index MgF layer between the polymer and substrate, the absorption is significantly improved over a broad wavelength range due to the strong reabsorption of light reflected at the polymer/MgF interface. With a 5 nm-thick MgF layer, the GaAs nanowire array solar cell with a height of 0.

Transient processes under excitation of ultrashort laser pulses in colloidal solutions of CdSe/ZnS quantum dots.

We present that in the case of picosecond durations, the limitation efficiency of laser radiation and absorption kinetics in CdSe/ZnS colloidal solutions is determined by Auger relaxation through the 1S(e) states. In the observed kinetics of a probe-pulse transmission, the "delayed limitation" effect has been detected. Numerical modeling has made it possible to identify the competition between the next two relaxation processes of highly excited states: relaxation through size quantization levels and phononless relaxation through traps states.

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires.

Model for large-area monolayer coverage of polystyrene nanospheres by spin coating.

Nanosphere lithography, an inexpensive and high throughput technique capable of producing nanostructure (below 100 nm feature size) arrays, relies on the formation of a monolayer of self-assembled nanospheres, followed by custom-etching to produce nanometre size features on large-area substrates. A theoretical model underpinning the self-ordering process by centrifugation is proposed to describe the interplay between the spin speed and solution concentration. The model describes the deposition of a dense and uniform monolayer by the implicit contribution of gravity, centrifugal force and surface tension, which can be accounted for using only the spin speed and the solid/liquid volume ratio.

Length distributions of Au-catalyzed and In-catalyzed InAs nanowires.

We present experimental data on the length distributions of InAs nanowires grown by chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au film, Au colloidal nanoparticles and In droplets. Poissonian length distributions are observed in the first case. Au colloidal nanoparticles produce broader and asymmetric length distributions of InAs nanowires.

Catalyst-free growth of InAs nanowires on Si (111) by CBE.

We investigate a growth mechanism which allows for the fabrication of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. Our growth protocol consists of successive low-temperature (LT) nucleation and high-temperature growth steps. This method produces non-tapered InAs nanowires with controllable length and diameter.

Analytic scaling function for island-size distributions.

We obtain an explicit solution for the island-size distribution described by the rate equations for irreversible growth with the simplified capture rates of the form σ(s)(Θ)∝Θ(p)(a+s-1) for all s≥1, where s is the size and Θ is the time-dependent coverage. The intrinsic property of this solution is its scaling form in the continuum limit. The analytic scaling function depends on the two parameters a and p and is capable of describing very dissimilar distribution shapes, both monomodal and monotonically decreasing.

Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.

As MOSFETs are scaled down, power dissipation remains the most challenging bottleneck for nanoelectronic devices. To circumvent this challenge, alternative devices such as tunnel field effect transistors are potential candidates, where the carriers are injected by a much less energetically costly quantum band to band tunneling mechanism. In this context, axial nanowire heterointerfaces with well-controlled interfacial abruptness offer an ideal structure.

Rate equation approach to understanding the ion-catalyzed formation of peptides.

The salt-induced peptide formation is important for assessing and approaching schemes of molecular evolution. Here, we present experimental data and an exactly solvable kinetic model describing the linear polymerization of L-glutamic amino acid in water solutions with different concentrations of KCl and NaCl. The length distributions of peptides are well fitted by the model.

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.

Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the framework of a theoretical model. An unusual, non-monotonous diameter dependence of the InSb nanowire growth rate is demonstrated experimentally within a range of deposition conditions. Such a behavior is explained by competition between the Gibbs-Thomson effect and different diffusion-induced material fluxes.

New mode of vapor-liquid-solid nanowire growth.

We report on the new mode of the vapor-liquid-solid nanowire growth with a droplet wetting the sidewalls and surrounding the nanowire rather than resting on its top. It is shown theoretically that such an unusual configuration happens when the growth is catalyzed by a lower surface energy metal. A model of a nonspherical elongated droplet shape in the wetting case is developed.

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment.

The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates.

Shape modification of III-V nanowires: the role of nucleation on sidewalls.

The effect of sidewall nucleation on nanowire morphology is studied theoretically. The model provides a semiquantitative description of nanowire radius as a function of its length and the distance from the surface. It is demonstrated that the wire shape critically depends on the diffusion flux of adatoms from the substrate and on the rate of direct impingement to the sidewalls.

Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

A theoretical model of nanowire formation by the vapor-liquid-solid mechanism during molecular beam epitaxy and related growth techniques is presented. The model unifies the conventional adsorption-induced model, the diffusion-induced model, and the model of nucleation-mediated growth on the liquid-solid interface. The concentration of deposit atoms in the liquid alloy, the nanowire diameter, and all other characteristics of the growth process are treated dynamically as functions of the growth time.

Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires.

We present a modification of the Kolmogorov-Johnson-Mehl-Avrami crystallization model to the case of a finite size crystal facet growing layer by layer. A general expression for the facet growth rate is derived that provides an asymptotic matching to the known limit cases of very small and very large facets. The derived expression is applied to the study of the growth kinetics of vertical nanowires in the "vapor-liquid-solid" growth mechanism.