Overcoming the Tradeoff of Visible Transparency and Electrical Conductance via Dual Smoothing of Dielectric/Metal Interfaces in Cu-Thin-Layer-Based Transparent Electrodes.

The rapid advancement of flexible optoelectronic devices, such as light-emitting diodes, solar cells, and electrochromic devices, necessitates the development of high-performance flexible transparent electrodes (TEs). Dielectric/metal/dielectric (DMD)-type TEs are promising alternatives to conventional indium tin oxide (ITO) due to the high electrical conductance, excellent visible transparency, and sufficient mechanical flexibility. However, the tradeoff between electrical conductance and visible transparency poses a challenge to performance enhancement.

Smooth, Chemically Altered Nucleating Platform for Abrupt Performance Enhancement of Ultrathin Cu-Layer-Based Transparent Electrodes.

Rapid advances in flexible optoelectronic devices necessitate the concomitant development of high-performance, cost-efficient, and flexible transparent conductive electrodes (TCEs). This Letter reports an abrupt enhancement in the optoelectronic characteristics of ultrathin Cu-layer-based TCEs via Ar-mediated modulation of the chemical and physical states of a ZnO support surface. This approach strongly regulates the growth mode for the subsequently deposited Cu layer, in addition to marked alteration to the ZnO/Cu interface states, resulting in exceptional TCE performance in the form of ZnO/Cu/ZnO TCEs.