We present a comparative study of quasi-metallic (Eg ∼ 100 meV) and semiconducting (Eg ∼ 1 eV) suspended carbon nanotube pn-junctions introduced by electrostatic gating. While the built-in fields of the quasi-metallic carbon nanotubes (CNTs) are 1-2 orders of magnitude smaller than those of the semiconducting CNTs, their photocurrent is 2 orders of magnitude higher than the corresponding semiconducting CNT devices under the same experimental conditions. Here, the large exciton binding energy in semiconducting nanotubes (∼400 meV) makes it difficult for excitons to dissociate into free carriers that can contribute to an externally measured photocurent.
View Article and Find Full Text PDFWe report an experimental measurement of the acoustic signal emitted from an individual suspended carbon nanotube (CNT) approximate 2 μm in length, 1 nm in diameter, and 10(-21) kg in mass. This system represents the smallest thermoacoustic system studied to date. By applying an AC voltage of 1.
View Article and Find Full Text PDFPhotodetectors based on quasi-metallic carbon nanotubes exhibit unique optoelectronic properties. Due to their small bandgap, photocurrent generation is possible at room temperature. The origin of this photocurrent is investigated to determine the underlying mechanism, which can be photothermoelectric effect or photovoltaic effect, depending on the bandgap magnitude of the quasi-metallic nanotube.
View Article and Find Full Text PDFWe investigate the role of weak clamping forces, typically assumed to be infinite, in carbon nanotube mechanical resonators. Due to these forces, we observe a hysteretic clamping and unclamping of the nanotube device that results in a discrete drop in the mechanical resonance frequency on the order of 5-20 MHz, when the temperature is cycled between 340 and 375 K. This instability in the resonant frequency results from the nanotube unpinning from the electrode/trench sidewall where it is bound weakly by van der Waals forces.
View Article and Find Full Text PDFWe investigate the electronic and optoelectronic properties of quasi-metallic nanotube pn-devices, which have smaller band gaps than most known bulk semiconductors. These carbon nanotube-based devices deviate from conventional bulk semiconductor device behavior due to their low-dimensional nature. We observe rectifying behavior based on Zener tunneling of ballistic carriers instead of ideal diode behavior, as limited by the diffusive transport of carriers.
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