Publications by authors named "Shun-Ming Sun"
The Al-doped effects on the band offsets of ZnO/β-GaO interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.
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- The energy band alignment of ZnO/β-GaO heterojunctions was analyzed using X-ray photoelectron spectroscopy (XPS).
- Type-I band alignment was observed in all samples, with conduction band offsets ranging from 1.26 to 1.47 eV and valence band offsets from 0.20 to 0.01 eV as growth temperature increased from 150 to 250 °C.
- The increase in conduction band offset is linked to Zn interstitials, while a defect type V + OH leads to reduced valence band offset, aiding in the design of electronic devices.
Article Synopsis
- Beta-gallium oxide (β-GaO) is a highly regarded semiconductor with a wide bandgap (4.6-4.9 eV) and high breakdown electric field (8 MV/cm), making it promising for power electronics and optoelectronic applications.
- Despite its excellent properties, β-GaO devices suffer from contact issues between metal and the semiconductor, which limit their performance.
- The study reviews four main strategies to enhance the contact properties of β-GaO MOSFETs, with a focus on multilayer metal electrodes and interlayers as the most effective options compared to pre-treatment methods that can cause damage.