Distortion-free amplification of 100 GHz mode-locked optical frequency comb using quantum dot technology.

Semiconductor mode-locked optical frequency comb (ML-OFC) sources with extremely high repetition rates are central to many high-frequency applications, such as dense wavelength-division multiplexing. Dealing with distortion-free amplification of ultra-fast pulse trains from such ML-OFC sources in high-speed data transmission networks requires the deployment of semiconductor optical amplifiers (SOAs) with ultrafast gain recovery dynamics. Quantum dot (QD) technology now lies at the heart of many photonic devices/systems owing to their unique properties at the O-band, including low alpha factor, broad gain spectrum, ultrafast gain dynamics, and pattern-effect free amplification.

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001).

Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots.