Correction: Boron-doped few-layer graphene nanosheet gas sensor for enhanced ammonia sensing at room temperature.

[This corrects the article DOI: 10.1039/C9RA08707A.].

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors.

Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications.

Boron-doped few-layer graphene nanosheet gas sensor for enhanced ammonia sensing at room temperature.

Heteroatom doping in graphene is now a practiced way to alter its electronic and chemical properties to design a highly-efficient gas sensor for practical applications. In this series, here we propose boron-doped few-layer graphene for enhanced ammonia gas sensing, which could be a potential candidate for designing a sensing device. A facile approach has been used for synthesizing boron-doped few-layer graphene (BFLGr) by using a low-pressure chemical vapor deposition (LPCVD) method.

A high-performance hydrogen sensor based on a reverse-biased MoS/GaN heterojunction.

We report a MoS/GaN heterojunction-based gas sensor by depositing MoS over a GaN substrate via a highly controllable and scalable sputtering technique coupled with a post sulfurization process in a sulfur-rich environment. The microscopic and spectroscopic measurements expose the presence of highly crystalline and homogenous few atomic layer MoS on top of molecular beam epitaxially grown GaN film. Upon hydrogen exposure, the molecular adsorption tuned the barrier height at the MoS/GaN interface under the reverse biased condition, thus resulting in high sensitivity.