Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips.

Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bonding semiconductor power chips, such as the power insulated gated bipolar transistor (IGBT). However, for the traditional method of bonding IGBT chips, an external pressure of a few MPa is reported necessary for the sintering time of ~1 h. In order to shorten the processing duration time, we developed a rapid way to sinter nanosilver paste for bonding IGBT chips in less than 5 min using pulsed current.