Tuning crystal orientation and chiral spin order in MnGe by annealing process and ion implantation.

The non-collinear antiferromagnetic Weyl semimetal MnX (X = Ga, Ge, Sn) system has attracted a lot of attentions owing to its robust anomalous Hall effect (AHE), large spin Hall angle and small net magnetization at room temperature. The high spin-charge interconversion efficiency makes it a super candidate in topological antiferromagnetic spintronic devices, which could facilitate ultra-fast operation of high-density devices with low energy consumption. In this work, we have realized to obtain different chiral spin structures in Heusler alloy MnGe thin films, which originate from different crystalline orientations.

Chiral-Molecule-Based Spintronic Devices.

Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing.

Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions.

Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors.