Publications by authors named "Shruti Nirantar"

Air-channel devices have a special advantage due to the promise of vacuum-like ballistic transport in air, radiation insensitivity, and nanoscale size. Here, achieving high current at low voltage along with considerable mechanical stability is a primary issue. The comparative analysis of four planar and metallic electrode-pair geometries at 10 nm channel length is presented.

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Article Synopsis
  • A novel ultraviolet photodetector featuring unique taper-ended GaN-Nanotower structures demonstrates superior performance through a high surface-to-volume ratio and excellent morphology, leading to efficient photocurrent generation.
  • The device exhibits remarkable specifications, including a low dark current (~12 nA), high I/I ratio (>10), and a fast response time (~433 µs) under ultraviolet light (325 nm), achieving a photoresponsivity of 2.47 A/W in self-powered mode.
  • Enhanced performance is attributed to the lower strain and dislocations in the nanotower structure, along with a significant electric field resulting from varying Schottky barrier heights, making these structures promising for energy-efficient UV photodetector applications.
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Resistive switching crossbar architecture is highly desired in the field of digital memories due to low cost and high-density benefits. Different materials show variability in resistive switching properties due to the intrinsic nature of the material used, leading to discrepancies in the field because of underlying operation mechanisms. This highlights a need for a reliable technique to understand mechanisms using nanostructural observations.

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Scattering-free transport in vacuum tubes has always been superior to solid-state transistors. It is the advanced fabrication with mass production capability at low cost which drove solid-state nanoelectronics. Here, we combine the best of vacuum tubes with advanced nanofabrication technology.

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As an alternative to metallic resonators, dielectric resonators can increase radiation efficiencies of metasurfaces at terahertz frequencies. Such subwavelength resonators made from low-loss dielectric materials operate on the basis of oscillating displacement currents. For full control of electromagnetic waves, it is essential that dielectric resonators operate around their resonant modes.

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Single-crystal silicon is bonded to a metal-coated substrate and etched in order to form an array of microcylinder passive terahertz dielectric resonator antennas (DRAs). The DRAs exhibit a magnetic response, and hence the array behaves as an efficient artificial magnetic conductor (AMC), with potential for terahertz antenna and sensing applications.

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