Publications by authors named "Shreya Kundu"

InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution displays, high-density memories, and high-speed computing. However, its potential to be a key material for next-generation devices is strongly contingent on developing patterning processes with minimal damage at nanoscale dimensions. IGZO can be etched using CH-based plasma.

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This study is focused on Conductive Bridging Random Access Memory (CBRAM) devices based on chalcogenide electrolyte and Cu-supply materials, and aims at identifying the key material parameters controlling memory properties. The CBRAM devices investigated are integrated on CMOS select transistors, and are constituted by either Ge-Se or Ge-Te electrolyte layers of various compositions combined with a Cu2GeTe3 active chalcogenide electrode. By means of extensive physical and electrical characterization, we show for a given electrolyte system that slower write is obtained for a denser electrolyte layer, which is directly correlated with a lower atomic percentage of the chalcogen element in the layer.

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A novel scheme of pre-surface modification of media using mixed argon-nitrogen plasma is proposed to improve the protection performance of 1.5 nm carbon overcoats (COC) on media produced by a facile pulsed DC sputtering technique. We observe stable and lower friction, higher wear resistance, higher oxidation resistance, and lower surface polarity for the media sample modified in 70%Ar + 30%N2 plasma and possessing 1.

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An understanding of the factors influencing the thermal stability of ultrathin carbon overcoats (COCs) is crucial for their application in heat-assisted magnetic recording (HAMR) at densities ≥ 1 Tb/in(2). Two types of non-hydrogenated ultrathin (∼1.5 nm) COCs were investigated after being subjected to laser-induced localized heating (at temperatures > 700 K) as envisaged in HAMR.

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An ultrathin bilayer overcoat of silicon nitride and carbon (SiNx/C) providing low friction, high wear resistance, and high corrosion resistance is proposed for future generation hard disk media. The 16 Å thick SiNx/C overcoat consists of an atomically thin SiNx underlayer (4 Å) and a carbon layer (12 Å), fabricated by reactive magnetron sputtering and filtered cathodic vacuum arc (FCVA), respectively. When compared with monolithic overcoats of FCVA-deposited carbon (16 Å) and sputtered SiNx (16 Å), the SiNx/C bilayer overcoat demonstrated the best tribological performance with a coefficient of friction < 0.

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Self-assembly of block copolymers has been identified as a potential candidate for high density fabrication of nanostructures. However, the factors affecting its reliability and reproducibility as a patterning technique on various kinds of surfaces are not well-established. Studies pertaining to block copolymer self-assembly have been confined to ultra-flat substrates without taking into consideration the effect of surface roughness.

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