Publications by authors named "Shovon Pal"

Copper Sulfide (CuS) semiconductors have garnered interest, but the effect of transition metal doping on charge carrier kinetics and bandgap remains unclear. In this study, the interactions between dopant atoms (Nickel, Cobalt, and Manganese) and the CuS lattice using spectroscopy and electrochemical analysis are explored. The findings show that sp-d exchange interactions between band electrons and the dopant ions, which replace Cu, are key to altering the material's properties.

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As reserves of non-renewable energy sources decline, the search for sustainable alternatives becomes increasingly critical. Next-generation energy materials play a key role in this quest by enabling the manipulation of properties for effective energy solutions and understanding interfaces to enhance energy yield. Studying these interfaces is essential for managing charge transport in optoelectronic devices, yet it presents significant challenges.

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Processable covalent organic framework membranes (COFM) are emerging as potential semiconducting materials for device applications. Nevertheless, the fabrication of crystalline and free-standing 3D COFMs is challenging. In this work, a unique time and solvent-efficient triple-layer-dual interfacial (TLDI) approach for the simultaneous synthesis of two 3D COFMs from a single system is developed.

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When a system close to a continuous phase transition is subjected to perturbations, it takes an exceptionally long time to return to equilibrium. This critical slowing down is observed universally in the dynamics of bosonic excitations, such as order-parameter collective modes, but it is not generally expected to occur for fermionic excitations. Here using terahertz time-domain spectroscopy, we find evidence for fermionic critical slowing down in YbRhSi close to a quantum phase transition between an antiferromagnetic phase and a heavy Fermi liquid.

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Two-dimensional spectroscopy is performed on a terahertz (THz) frequency quantum cascade laser (QCL) with two broadband THz pulses. Gain switching is used to amplify the first THz pulse and the second THz pulse is used to probe the system. Fourier transforms are taken with respect to the delay time between the two THz pulses and the sampling time of the THz probe pulse.

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Terahertz sources based on intracavity difference-frequency generation in mid-infrared quantum cascade lasers (THz DFG-QCLs) have recently emerged as the first monolithic electrically pumped semiconductor sources capable of operating at room temperature across the 1- to 6-THz range. Despite tremendous progress in power output, which now exceeds 1 mW in pulsed and 10 μW in continuous-wave regimes at room temperature, knowledge of the major figure of merits of these devices for high-precision spectroscopy, such as spectral purity and absolute frequency tunability, is still lacking. By exploiting a metrological grade system comprising a terahertz frequency comb synthesizer, we measure, for the first time, the free-running emission linewidth (LW), the tuning characteristics, and the absolute center frequency of individual emission lines of these sources with an uncertainty of 4 × 10.

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Dispersion control is a key objective in the field of photonics and spectroscopy, since it enhances non-linear effects by both enabling phase matching and offering slow light generation. In addition, it is essential for frequency comb generation, which requires a phase-lock mechanism that is provided by broadband compensation of group velocity dispersion (GVD). At optical frequencies, there are several well-established concepts for dispersion control such as prism or grating pairs.

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The interaction between intersubband resonances (ISRs) and metamaterial microcavities constitutes a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a terahertz metamaterial and the ISR in a high electron mobility transistor (HEMT) structure. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gate.

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We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots. We use Fourier transform infrared transmission spectroscopy via a density chopping scheme for direct experimental observation of the intersublevel spacings of electrons without any external magnetic field. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown within the ultra high vacuum conditions of molecular beam epitaxy to voltage-tune the device, while a two dimensional electron gas (2DEG) serves as a back contact.

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