Two-Dimensional Dion-Jacobson Perovskite (NHCHNH)CsPbBr with High X-ray Sensitivity and Peak Discrimination of α-Particles.

Two-dimensional (2D) halide perovskites have attracted extensive interest because of their excellent optoelectronic properties, structural diversity, and promising stability. Herein, we grow a novel 2D Dion-Jacobson halide perovskite, (BDA)CsPbBr (BDA = 1,4-butanediamine, NHCHNH), which exhibits a large bandgap (∼2.76 eV), high resistivity (∼4.

Paired double parallelogram flexure mechanism clamped by corrugated beam for underconstraint elimination.

This Note presents a kind of paired double parallelogram (DP) flexure mechanism clamped by a sinusoidal corrugated beam to solve the problem of underconstraint of its secondary stages. The results show that the proposed mechanism effectively constrains the undesired motions of the secondary stages without changing the stiffness and the first-order natural frequency in the working direction. The second- and third-order natural frequencies of the mechanism are increased by 9.

Effect of Deep-Level Defects on the Performance of CdZnTe Photon Counting Detectors.

The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device's performance are not yet clearly understood. In this study, a 16-pixel CdZnTe X-ray photon counting detector with a non-uniform counting performance is investigated.

Investigation on X-Ray Photocurrent Response of CdZnTe Photon Counting Detectors.

Counting rate is an important factor for CdZnTe photon counting detectors as high-flux devices. Until recently, there has been a lack of knowledge on the relationship between X-ray photocurrent response and the photon counting performance of CdZnTe detectors. In this paper, the performance of linear array 1 × 16-pixel CdZnTe photon counting detectors operated under different applied biases is investigated.

Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy.

The influence of damage induced by 2MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3×10(11)p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence.

Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy.

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

Correction: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.

Correction for 'Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface' by Shouzhi Xi et al., Phys. Chem.

Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.

The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.