A highly integrated nonvolatile bidirectional RFET with low leakage current.

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides.

Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate.

A complementary doped source-based reconfigurable Schottky diode (CDS-RSD) is proposed for the first time. Unlike other types of reconfigurable devices that have source and drain (S/D) regions with the same material, this has a complementary doped source region as well as a metal silicide drain region. Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation.

A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.

In this paper, a nanoscale dopingless bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal materials to form two different types of Schottky barriers on the interface between the S/D and silicon. For one of the two metal forms, the Schottky barrier height between the conduction band of the semiconductor and one of the two metal materials is lower than half of the energy band gap.

A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates.

A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed. Comparing to the conventional reconfigurable field effect transistor (RFET) which requires two independently powered gates, the proposed NBRFET requires only one control gate. Beside, S/D floating gates are introduced.

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor.

In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than the previously proposed High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Silicon body of the proposed VPISDC-HSB-BTFET is etched into a U-shaped structure.

A dual doping nonvolatile reconfigurable FET.

In this work, we propose a dual doping based nonvolatile reconfigurable field effect transistor with source/drain (S/D) charge storage layers (DDN R-FET). It introduces nonvolatile charge storage layers on both source and drain sides as a floating program gate (FPG) instead of a program gate (PG) that needs independent power supply. The stored charges in the FPG are programmed by the control gate (CG).

A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor.

In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires only one gate electrode with independent power supply. More importantly, take an N type HLHSB-BTFET as an example, different from the previously proposed HSB-BTFET, due to that the effective potential of the central metal is increased with the increasing of drain to source voltage (V), built-in barrier heights maintain at the same value when the V is increased.

Rational Design of a Triple Tumor Microenvironment-Responsive Nanoplatform for Enhanced Tumor Theranostics.

The development of responsive nanoplatforms based on the tumor microenvironment (TME) is critical for tumor diagnosis and treatment. Concentrating on a single TME-responsive nanoplatform, however, may result in insufficient diagnostic accuracy and treatment efficacy. Herein, layered double-hydroxides (LDHs) and rare earth nanomaterials (Er@Lu) were combined to create a triple TME-responsive nanoplatform that was then modified with cypate (a fluorescent dye with strong absorbance) by a peptide chain and loaded with epigallocatechin gallate (EGCG), a chemotherapeutic drug.

Cytotoxic Effects of Castalin Nanoparticles Against Osteosarcoma.

The size-dependent bioactivities of castalin were analyzed by comparing the cytotoxic effects of native castalin and castalin nanoparticles on osteosarcoma in vitro and in vivo. In vitro experiments indicated that castalin nanoparticles induced apoptosis of an osteosarcoma cell line more efficiently than native castalin. The more potent effects of castalin nanoparticles, relative to native castalin, were confirmed in vivo using a xenograft osteosarcoma model.

Dieckol exerts anticancer activity in human osteosarcoma (MG-63) cells through the inhibition of PI3K/AKT/mTOR signaling pathway.

Background: Osteosarcoma (OS) is the most common malignant bone cancer with more metastasis and increased occurrence in children and teen-agers and being responsible for more number of morbidity and mortality worldwide.

Objective: The current exploration was planned study the anticancer actions of dieckol against human OS MG-63 cells via PI3K/AKT/mTOR signaling inhibition.

Methodology: The cytotoxicity of dieckol was scrutinized by MTT assay.

CT45A1 promotes the metastasis of osteosarcoma cells in vitro and in vivo through β-catenin.

Increased expression of cancer/testis antigens (CTAs) is reported in various tumors. However, the unique role of CTAs in tumor genesis has not yet been verified. Here, we first report the functional role of CT45A1 in the carcinogenesis of osteosarcoma.

Serum amyloid A promotes osteosarcoma invasion via upregulating αvβ3 integrin.

Serum amyloid A (SAA) is regarded as an important acute phase protein involved in tumor progression and metastasis. However, at present there is no evidence of its involvement in osteosarcoma. The present study aimed to investigate the effect of SAA on the invasion of osteosarcoma cells.