Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space.

Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications. In this paper, we develop a model of detector quantum efficiency (QE) as a function of Si-SiO interface and oxide trap densities to analyze the performance of silicon detectors and explore the requirements for stable, radiation-hardened surface passivation. By analyzing QE data acquired before, during, and after, exposure to damaging UV radiation, we explore the physical and chemical mechanisms underlying UV-induced surface damage, variable surface charge, QE, and stability in ion-implanted and delta-doped detectors.

Aluminum Precursor Interactions with Alkali Compounds in Thermal Atomic Layer Etching and Deposition Processes.

Surface fluorination and volatilization using hydrogen fluoride and trimethyaluminum (TMA) is a useful approach to the thermal atomic layer etching of AlO. We have previously shown that significant enhancement of the TMA etching effect occurs when performed in the presence of lithium fluoride chamber-conditioning films. Now, we extend this enhanced approach to other alkali halide compounds including NaCl, KBr, and CsI.

Characterization of the Percival detector with soft X-rays.

In this paper the back-side-illuminated Percival 2-Megapixel (P2M) detector is presented, along with its characterization by means of optical and X-ray photons. For the first time, the response of the system to soft X-rays (250 eV to 1 keV) is presented. The main performance parameters of the first detector are measured, assessing the capabilities in terms of noise, dynamic range and single-photon discrimination capability.

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology.

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV.

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes.

Metal-dielectric filters for solar-blind silicon ultraviolet detectors.

We report on the fabrication of metal-dielectric thin film stacks deposited directly onto silicon substrates for use as ultraviolet bandpass filters. Integration of these filters onto silicon improves the admittance matching of the structure when compared to similar designs fabricated on transparent substrates, leading to higher peak transmission or improved out-of-band rejection if used with a Si-based sensor platform. Test structures fabricated with metallic Al and atomic layer deposited Al2O3 were characterized with spectroscopic ellipsometry and agree well with optical models.

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications.

We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays.

Ultraviolet antireflection coatings for use in silicon detector design.

We report on the development of coatings for a charged-coupled device (CCD) detector optimized for use in a fixed dispersion UV spectrograph. Because of the rapidly changing index of refraction of Si, single layer broadband antireflection (AR) coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths.

A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared.

In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.

Nanoplatforms for constructing new approaches to cancer treatment, imaging, and drug delivery: what should be the policy?

Nanotechnology is the design and assembly of submicroscopic devices called nanoparticles, which are 1-100 nm in diameter. Nanomedicine is the application of nanotechnology for the diagnosis and treatment of human disease. Disease-specific receptors on the surface of cells provide useful targets for nanoparticles.