ACS Appl Energy Mater
November 2024
A highly efficient hole-selective passivating contact remains the crucial step required to increase the efficiency of polysilicon-based Si solar cells. The future development of solar modules depends on a device structure that can complement the electron-selective tunnel oxide passivating contact with an equivalent hole-selective contact. We investigate plasma enhanced chemical vapor deposited (PECVD) SiN and atomic layer deposited AlO as alternative nanolayers for the passivation layer in polysilicon tunnel contacts.
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