Composition analysis of β-(In Ga )O thin films coherently grown on (010) β-GaO via mist CVD.

This study investigates the compositional analysis and growth of β-(In Ga )O thin films on (010) β-GaO substrates using mist chemical vapor deposition (CVD), including the effects of the growth temperature. We investigated the correlation between In composition and -axis length in coherently grown films, vital for developing high-electron-mobility transistors and other devices based on β-(In Ga )O. Analytical techniques, including X-ray diffraction (XRD), reciprocal space mapping, and atomic force microscopy, were employed to evaluate crystal structure, strain relaxation, and surface morphology.