Random access vision: an imaging method to observe arbitrary and multiple gaze directions in frame-by-frame manner.

In robot vision, it is often desired to measure an area larger than the field of view of the camera, so the camera tends to be mounted on a mechanical pan/tilt platform. However, such mechanisms have a non-negligible response time compared to the frame rate of the camera. In this paper, we describe what we believe to be a new method that allows arbitrary and multiple gaze directions to be observed in a frame-by-frame manner based on a resonant mirror and a lock-in pixel image sensor.

Motion-resistant three-wavelength spatial frequency domain imaging system with ambient light suppression using an 8-tap CMOS image sensor.

Significance: We present a motion-resistant three-wavelength spatial frequency domain imaging (SFDI) system with ambient light suppression using an 8-tap complementary metal-oxide semiconductor (CMOS) image sensor (CIS) developed at Shizuoka University. The system addresses limitations in conventional SFDI systems, enabling reliable measurements in challenging imaging scenarios that are closer to real-world conditions.

Aim: Our study demonstrates a three-wavelength SFDI system based on an 8-tap CIS.

Depth Quality Improvement with a 607 MHz Time-Compressive Computational Pseudo-dToF CMOS Image Sensor.

In this paper, we present a prototype pseudo-direct time-of-flight (ToF) CMOS image sensor, achieving high distance accuracy, precision, and robustness to multipath interference. An indirect ToF (iToF)-based image sensor, which enables high spatial resolution, is used to acquire temporal compressed signals in the charge domain. Whole received light waveforms, like those acquired with conventional direct ToF (dToF) image sensors, can be obtained after image reconstruction based on compressive sensing.

A Time-of-Flight Image Sensor Using 8-Tap P-N Junction Demodulator Pixels.

This paper presents a time-of-flight image sensor based on 8-Tap P-N junction demodulator (PND) pixels, which is designed for hybrid-type short-pulse (SP)-based ToF measurements under strong ambient light. The 8-tap demodulator implemented with multiple p-n junctions used for modulating the electric potential to transfer photoelectrons to eight charge-sensing nodes and charge drains has an advantage of high-speed demodulation in large photosensitive areas. The ToF image sensor implemented using 0.

Development of a Current Injection-Type Impedance Measurement System for Monitoring Soil Water Content and Ion Concentration.

This study was conducted with the aim of developing a circuit system that enables the measurement of the moisture content and ion concentration with a simple circuit configuration. Our previous studies have shown that soil can be represented by an equivalent circuit of a parallel circuit of resistors and capacitors. We designed a circuit that can convert the voltage transient characteristics of the soil when a current is applied to it into a square wave and output frequency information and developed an algorithm to analyze the two types of square waves and calculate R and C.

Resolving Multi-Path Interference in Compressive Time-of-Flight Depth Imaging with a Multi-Tap Macro-Pixel Computational CMOS Image Sensor.

Multi-path interference causes depth errors in indirect time-of-flight (ToF) cameras. In this paper, resolving multi-path interference caused by surface reflections using a multi-tap macro-pixel computational CMOS image sensor is demonstrated. The imaging area is implemented by an array of macro-pixels composed of four subpixels embodied by a four-tap lateral electric field charge modulator (LEFM).

A Dual-Mode 303-Megaframes-per-Second Charge-Domain Time-Compressive Computational CMOS Image Sensor.

An ultra-high-speed computational CMOS image sensor with a burst frame rate of 303 megaframes per second, which is the fastest among the solid-state image sensors, to our knowledge, is demonstrated. This image sensor is compatible with ordinary single-aperture lenses and can operate in dual modes, such as single-event filming mode or multi-exposure imaging mode, by reconfiguring the number of exposure cycles. To realize this frame rate, the charge modulator drivers were adequately designed to suppress the peak driving current taking advantage of the operational constraint of the multi-tap charge modulator.

Range-precision improvement of a time-of-flight range sensor using dual reference plane sampling.

This study aimed to achieve high range precision in the sub-100 µm order with time-of-flight (TOF) range imaging for 3-D scanners. The precision of a TOF range imager was improved using dual reference plane sampling (DRPS). DRPS using two short-pulse lasers reduces driver jitter, which limits the range precision below sub-100 µm.

High-Linearity High-Resolution Time-of-Flight Linear-Array Digital Image Sensor Using Time-Domain Feedback.

This paper presents a high-linearity high-resolution time-of-flight (ToF) linear-array digital image sensor using a time-domain negative feedback technique. A coarse ToF measurement loop uses a 5-bit digital-to-time converter (DTC) and a delayed gating-pulse generator for time-domain feedback to find the zero of the difference between ToF and the digital estimate of the gating-pulse delay while maintaining a constant operating point of the analog readout circuits. A fine ToF measurement uses a delta-sigma modulation (DSM) loop using the time-domain feedback with a bit-stream signal form.

Fluoroimmunoassay of influenza virus using sulfur-doped graphitic carbon nitride quantum dots coupled with AgS nanocrystals.

Novel sulfur-doped graphitic carbon nitride quantum dots (S-gCNQDs) are synthesized using a single-source precursor in a one-step solvothermal process. The S-gCNQDs with a size of ~ 5-nm displayed a strong green intrinsic fluorescence at 512 nm when excited at 400 nm, with a quantum yield of ~ 33% in aqueous solution. The prepared S-gCNQDs and AgS nanocrystals were applied as innovative functional materials to fabricate a biosensor for virus detection based on the conjugation of specific anti-human influenza A monoclonal antibody to the S-gCNQDs and AgS NCs, respectively.

Quasi-simultaneous multi-focus imaging using a lock-in pixel image sensor and TAG lens.

In this paper, a quasi-simultaneous multi-focus imaging technique named simulfocus imaging is reported. This technique was developed for measuring an entire object distributed in the depth direction beyond the depth of field (DOF) with high resolution in a single shot. Simulfocus imaging can acquire multiple focal planes in one shot by synchronizing a tunable acoustic gradient index (TAG) lens and a lock-in pixel image sensor.

An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements.

An 8-tap CMOS lock-in pixel image sensor that has seven carrier-capturing and a draining time window was developed for short-pulse time-of-flight (TOF) measurements. The proposed pixel for the short-pulse TOF measurements has seven consecutive time-gating windows, each of which has the width of 6 ns, which is advantageous for high-resolution range imaging, particularly for relatively longer distances (>5 m) and under high ambient light operations. In order to enhance the depth resolution, a technique for the depth-adaptive time-gating-number assignment (DATA) for the short-pulse TOF measurement is proposed.

A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications.

In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region.

Multi-exposure laser speckle contrast imaging using a video-rate multi-tap charge modulation image sensor.

Multi-exposure laser speckle contrast imaging (MELSCI) systems based on high frame rate cameras are suitable for wide-field quantitative measurement of blood flow. However, high-speed camera-based MELSCI requires high power consumption, large memory, and high processing capability, which may lead to relatively large and expensive hardware. To realize a compact and cost-efficient MELSCI system, we discuss an application of the multi-tap CMOS image sensor originally designed for time-of-flight range imaging.

A Wide Dynamic Range CMOS Image Sensor with a Charge Splitting Gate and Two Storage Diodes.

In this paper, a wide dynamic range (WDR) CMOS image sensor (CIS) with a charge splitting gate (SG) and two storage diodes (SDs) is presented. By using single-gate on/off control with the SG, photocurrent path to the first (SD1) or second storage diodes (SD2) is switched alternatively and periodically during exposure and signal electrons generated in a photodiode (PD) are transferred to and accumulated in the SD1 or SD2. By setting a large ratio of the off-time to on-time of the SG, two different sensitivity signals, which are originated by the same photodiode, are generated and a WDR image signal is obtained.

Plasmonic Color Filter Array with High Color Purity for CMOS Image Sensors.

We demonstrate the multiband color filtering of a standard RGB color and a complementary CMY color by a plasmonic color filter, composed of concentric corrugated metallic thin film rings. The surface plasmon resonance is excited by the periodic corrugation, and the coupled light is transmitted through the central subwavelength aperture. Color selectivity is achieved not only in the visible but also in the near-infrared (NIR) region.

Multi-band plasmonic color filters for visible-to-near-infrared image sensors.

We propose a plasmonic color filter consisting of a single aperture surrounded by concentric periodic corrugations for simultaneous imaging of a spectral range from the visible to the near-infrared. The incident light coupled with surface plasmons propagates through the sub-wavelength aperture as beaming light. The beaming light transmission is able to suppress the spatial color cross-talk between the pixels in an image sensor.

Widefield multifrequency fluorescence lifetime imaging using a two-tap complementary metal-oxide semiconductor camera with lateral electric field charge modulators.

Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) measures the fluorescence lifetime of entire images in a fast and efficient manner. We report a widefield FD-FLIM system based on a complementary metal-oxide semiconductor camera equipped with two-tap true correlated double sampling lock-in pixels and lateral electric field charge modulators. Owing to the fast intrinsic response and modulation of the camera, our system allows parallel multifrequency FLIM in one measurement via fast Fourier transform.

A Silicon-on-Insulator-Based Dual-Gain Charge-Sensitive Pixel Detector for Low-Noise X-ray Imaging for Future Astronomical Satellite Missions.

In this paper, we report on the development of a monolithic active pixel sensor for X-ray imaging using 0.2 µm fully depleted silicon-on-insulator (SOI)-based technology to support next generation astronomical satellite missions. Detail regarding low-noise dual-gain SOI based pixels with a charge sensitive amplifier and pinned depleted diode sensor structure is presented.

Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor.

A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise. Although semi-photon-counting-level (SPCL) ultra-low noise complementary-metal-oxide-semiconductor (CMOS) image sensors (CISs) with high conversion gain pixels have emerged, they still suffer from huge RTS noise, which is inherent to the CISs. The proposed method utilizes a multi-aperture (MA) camera that is composed of multiple sets of an SPCL CIS and a moderately fast and compact imaging lens to emulate a very fast single lens.

The Dynamic Photometric Stereo Method Using a Multi-Tap CMOS Image Sensor.

The photometric stereo method enables estimation of surface normals from images that have been captured using different but known lighting directions. The classical photometric stereo method requires at least three images to determine the normals in a given scene. However, this method cannot be applied to dynamic scenes because it is assumed that the scene remains static while the required images are captured.

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel.

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering.

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light.

A 7 ke-SD-FWC 1.2 e-RMS Temporal Random Noise 128×256 Time-Resolved CMOS Image Sensor With Two In-Pixel SDs for Biomedical Applications.

A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors.

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC).