An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devices.

Though the complementary power field effect transistors (FETs), e.g., metal-oxide-semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material other than diamond.