Serine/threonine protein kinase mediates rifampicin resistance in through interacting with ribosomal protein RpsD and affecting antioxidant capacity.

Unlabelled: Brucellosis, a zoonotic disease, has re-emerged in both humans and animals, causing significant economic losses globally. Recently, an increasing number of rifampicin-resistant strains have been isolated worldwide without detectable mutations in known antibiotic resistance genes. Here, this study identified the deletion of serine/threonine protein kinase (STPK) gene in as an efficient trigger for rifampicin resistance using bioinformatics predictions, a transposon mutant library, and gene mutation strains.

Z-Scheme Heterojunction of Phosphorus-Doped Carbon Nitride/Titanium Dioxide: Photocatalytic Performance.

With increasingly serious environmental pollution problems, the development of efficient photocatalytic materials has become a hotspot in current research. This study focused on phosphorus-doped carbon nitride/titanium dioxide (PCT) Z-type heterojunctions, aiming to deeply investigate their photocatalytic degradation and photosensitive antimicrobial properties. A PCT Z-type heterojunction was successfully fabricated using melamine phosphate, cyanuric acid, and titanium dioxide.

Flight trajectory prediction enabled by time-frequency wavelet transform.

Accurate flight trajectory prediction is a crucial and challenging task in air traffic control, especially for maneuver operations. Modern data-driven methods are typically formulated as a time series forecasting task and fail to retain high accuracy. Meantime, as the primary modeling method for time series forecasting, frequency-domain analysis is underutilized in the flight trajectory prediction task.

GaN-based light-emitting diodes on various substrates: a critical review.

GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.