Nanostructured p-TiO/n-GaN heterostructure as a potential photoelectrode for efficient charge separation.

This work proposes p-TiO/n-GaN as a new semiconductor heterostructure, which holds great promise as a photoelectrode material. To fabricate p-TiO/n-GaN heterostructures, wurtzite GaN is grown in two different morphologies by molecular beam epitaxy, and a TiO overlayer is formed by atomic layer deposition. The XRD and Raman experiments confirm the anatase crystal structure of TiO and SEM shows the conformal coating of TiO on GaN.