Publications by authors named "Shishou Kang"

For the spin-to-charge conversion (SCC) in heavy metal/ferromagnet (HM/FM) heterostructure, the contribution of interfacial spin-orbit coupling (SOC) remains controversial. Here, we investigate the SCC process of the Pt/NiFe heterostructure by the spin pumping in YIG/Pt/NiFe/IrMn multilayers. Due to the exchange bias of NiFe/IrMn structure, the NiFe magnetization can be switched between magnetically unsaturated and saturated states by opposite resonance fields of YIG layer.

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The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature.

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Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect.

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Ferromagnetic resonance (FMR) in soft magnetic films (SMFs) to a large extent determines the maximum working frequency of magnetic devices. The FMR frequency (fr) in an optical mode is usually much higher than that in the corresponding acoustic mode for exchange coupled ferromagnet/nonmagnet/ferromagnet (FM/NM/FM) trilayers. In this study, we prepared a 50 nm FeCoB film with uniaxial magnetic anisotropy (UMA), showing a high acoustic mode fr of 4.

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Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%.

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Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO-ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface.

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The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good insulating layer for tunneling magnetoresistance but also easily switches between high and low resistance states under electrical field. Here we firstly propose to use nanon composite barrier layers of CoO-ZnO to fabricate the spin memristive Co/CoO-ZnO/Co magnetic tunnel junctions.

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We report a new synthesis of PtRe alloy nanoparticles (NPs) and their electrocatalytic activity for methanol oxidation. PtRe alloy NPs with controlled composition were prepared by a capping agents-based colloidal method. In the synthesis, trioctylamine was used as high-boiling solvent, and oleylamine/oleic acid were employed as capping agents to control the particle size and dispersion.

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Chemically synthesized FePt nanoparticles were coated with nonmagnetic SiO2 and MnO shells by sol-gel and polyol processes. TEM images show that the FePt/SiO2 nanoparticles exhibit a thick spherical shell. The size and morphology of the MnO shell can be controlled by changing the reaction temperature, the molar ratio of surfactants/Mn(acac)2, and/or the concentration of precursor.

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Recent studies have shown a strong correlation between grain growth and chemical ordering in chemically synthesized FePt nanoparticles. In order to study this effect, we have prepared a series of samples in which 3.5 nm FePt nanoparticles are dispersed in a matrix of Cu nanoparticles.

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Self-assembled FePt/MnO nanoparticles with different morphology and size were synthesized with a polyol process. With the MnO coating, FePt nanoparticles exhibit a high blocking temperature and magnetic moment. The low-temperature hysteresis loop of FePt nanoparticles can be shifted through the AFM pinning of the MnO shell.

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