Determination of Low Concentrations of Mercury Based on the Electrodeposition Time.

Soil plays a crucial role in human health through its impact on food and habitation. However, it often contains toxic heavy metals, with mercury being particularly hazardous when methylated. Currently, high-sensitivity, rapid detection of mercury is achievable only through electrochemical measurements.

Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface.

Boron-doped diamond (BDD) has tremendous potential for use as an electrode material with outstanding characteristics. The substrate material of BDD can affect the electrochemical properties of BDD electrodes due to the different junction structures of BDD and the substrate materials. However, the BDD/substrate interfacial properties have not been clarified.

Quantification of caffeine in coffee cans using electrochemical measurements, machine learning, and boron-doped diamond electrodes.

Electrochemical measurements, which exhibit high accuracy and sensitivity under low contamination, controlled electrolyte concentration, and pH conditions, have been used in determining various compounds. The electrochemical quantification capability decreases with an increase in the complexity of the measurement object. Therefore, solvent pretreatment and electrolyte addition are crucial in performing electrochemical measurements of specific compounds directly from beverages owing to the poor measurement quality caused by unspecified noise signals from foreign substances and unstable electrolyte concentrations.

High-Density and Monodisperse Electrochemical Gold Nanoparticle Synthesis Utilizing the Properties of Boron-Doped Diamond Electrodes.

Owing to its simplicity and sensitivity, electrochemical analysis is of high significance in the detection of pollutants and highly toxic substances in the environment. In electrochemical analysis, the sensitivity of the sensor and reliability of the obtained signal are especially dependent on the electrode characteristics. Electrodes with a high density of nanomaterials, which exhibit excellent activity, are useful as sensor substrates for pollutant detection.

Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces.

A laser-induced doping method was employed to incorporate phosphorus into an insulating monocrystalline diamond at ambient temperature and pressure conditions. Pulsed laser beams with nanosecond duration (20 ns) were irradiated on the diamond substrate immersed in a phosphoric acid liquid, in turns, and a thin conductive layer was formed on its surface. Phosphorus incorporation in the depth range of 40-50 nm below the irradiated surface was confirmed by secondary ion mass spectroscopy (SIMS).

Temperature Dependence of Alternating Current Impedance in -Type Si/B-Doped -Type Ultrananocrystalline Diamond Heterojunctions Produced Through Pulsed Laser Deposition.

In the present research, heterojunctions comprised of -type Si wafer substrates and B-doped -type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were produced successfully by using pulsed laser deposition. Their alternating current impedance characteristics, under various frequencies, were measured and studied as a function of temperature in the range 200 to 400 K. Both the real (') and imaginary (″) parts of the complex impedance were temperature dependent.

and Characteristics of -Type Si/B-Doped -Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition.

-Type Si/-type B-doped ultrananocrystalline diamond heterojunction photodiodes were built using pulsed laser deposition at a heated substrate temperature of 550 °C. Following the capacitance-voltage-frequency () and conductance-voltage-frequency () plots, the series resistance () values at zero bias voltage were 154.41 Ω at 2 MHz and 1.

Diode Parameters of Heterojunctions Comprising -Type Ultrananocrystalline Diamond Films and -Type Si Substrates.

In the current research, heterojunctions comprising -type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and -type Si substrates were formed via pulsed laser deposition. To extract their junction parameters via thermionic emission (TE) theory and Norde model, the measurement of dark current density-voltage curves was carried out under various temperatures ranging from 300 to 60 K. Through TE theory, the ideality factor values at 300 K and 60 K were 2.