Understanding the crystallization mechanism of amorphous metal-oxide thin films remains of importance to avoid the deterioration of multifunctional flexible electronics. We derived the crystallization mechanism of indium-based functional amorphous oxide films by using in situ X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. Crystallization begins with surface nucleation, especially at low annealing temperatures, and proceeds simultaneous nucleation and growth in the bulk.
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