Background: Physical restraint of patients in intensive care units (ICUs) has an estimated prevalence of 50%. Many medical centres do not have specific protocols for physical restraint, and the decision of whether to physically restrain a patient is up to the nursing staff. Disadvantages of physical restraint include injuries, exacerbation of agitation and an increased risk of developing post-traumatic stress disorder (PTSD).
View Article and Find Full Text PDFWe demonstrate enhanced Andreev reflection in a Nb/InGaAs/InP-based superconductor-semiconductor hybrid device resulting in increased Cooper-pair injection efficiency, achieved by Cooper-pair tunneling into a semiconductor quantum well resonant state. We show this enhancement by investigating the differential conductance spectra of two kinds of samples: one exhibiting resonant states and one which does not. We observe resonant features alongside strong enhancement of Cooper pair injection in the resonant sample, and lack of Cooper pair injection in the nonresonant sample.
View Article and Find Full Text PDFBackground: Proximal femoral fractures (PFF) are among the most common injuries in the elderly population treated by orthopedic surgeons. Postoperative complications, especially infections, are of great importance due to their effect on patient mortality and morbidity and healthcare costs.
Objectives: To assess the main causes for postoperative infection among PFF patients.
Nanomaterials (Basel)
September 2019
Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal-organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber.
View Article and Find Full Text PDFWe experimentally demonstrate Cooper-pair injection into a superconducting light-emitting diode by observing Andreev reflection at the superconductor-semiconductor interface, overcoming the contradicting requirements of an electrically transparent interface and radiative recombination efficiency. The device exhibits electroluminescence enhancement at the quasi-Fermi energy at temperatures below T. The theoretically predicted conductance and electroluminescence spectra based on Cooper-pair injection into the semiconductor correspond well to our experimental results.
View Article and Find Full Text PDFControlling the transition from axial to radial growth is essential for advanced III-V nanowire (NW) technology. Growth temperature and precursor flux affect this transition in a complicated manner. Here, we report on experiments designed to map the axial to radial growth transition of InP NWs prepared by the selective-area vapor-liquid-solid method during metal-organic molecular beam epitaxy.
View Article and Find Full Text PDFWe report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW.
View Article and Find Full Text PDFThe ability to engineer material properties at the nanoscale is a crucial prerequisite for nanotechnology. Hereunder, we suggest and demonstrate a novel approach to realize non-hemispherically shaped nanowire catalysts, subsequently used to grow InP nanowires with a cross section anisotropy ratio of up to 1:1.8.
View Article and Find Full Text PDFQuasi-two-dimensional semiconductor materials are desirable for electronic, photonic, and energy conversion applications as well as fundamental science. We report on the synthesis of indium phosphide flag-like nanostructures by epitaxial growth on a nanowire template at 95% yield. The technique is based on in situ catalyst unpinning from the top of the nanowire and its induced migration along the nanowire sidewall.
View Article and Find Full Text PDFThe growth of InP nanowires on an InP(111) B substrate is reported. The substrate native oxide was not removed from the surface prior to growth. Nanowires were grown at 400 °C from gold catalysts in a selective area manner, without bulk growth.
View Article and Find Full Text PDFArrays of gold single-strip and double-strip nano-antennas, with resonance in the wavelength range of 1200-1600 nm, were fabricated on the top of InGaAs/InP multi quantum well structure. Photo-luminescence from the quantum-wells was measured and shown to be enhanced by a factor of up to 9, with maximum enhancement wavelength corresponding to the nano-antennas resonance. Emission enhancement is attributed to the coupling of emitting charge-carriers to the plasmonic nano-antennas, causing an estimated increase in the radiative recombination rate by a factor of ~25, thus making it dominant over non-radiative recombination.
View Article and Find Full Text PDFJ Ocul Pharmacol Ther
April 2004
Purpose: To evaluate the sterility of topical glaucoma medications among chronic glaucoma medication users in the community.
Setting: Glaucoma service, Sanz Medical Center, Laniado Hospital, Netanya. Research mode: Cross-sectional laboratory and clinical study.