Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation.

In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlGaN/GaN/AlGaN material system, with a fixed aluminum mole fraction of = 0.3. Two distinct MQW diode configurations, namely junction-based and Schottky barrier diode structures, were investigated for their THz potential.