Correction: Simulation of the resistance switching performance and synaptic behavior of TiO-based RRAM devices with CoFeO insertion layers.

Correction for 'Simulation of the resistance switching performance and synaptic behavior of TiO-based RRAM devices with CoFeO insertion layers' by Fei Yang , , 2024, , 6729-6738, https://doi.org/10.1039/D3NR05935A.

Simulation of the resistance switching performance and synaptic behavior of TiO-based RRAM devices with CoFeO insertion layers.

The electrothermal coupling model of Pt/CoFeO/TiO/TiN devices was established to study their resistive switching characteristics and basic biological synaptic properties in our research. The processes of set and reset are simulated, and the distribution of the temperature, the electric field and the concentration of oxygen vacancies in the dielectric layer are obtained. The switching performance of the TiO-based device is significantly improved after the CoFeO layer is inserted, with the switching voltage, working current and power consumption being reduced, while the switching ratio is increased.

Solving the issue of increasing forming voltage during device miniaturization in hafnium oxide-based resistive access memory using high-sidewall material.

An electrothermal coupling model of resistive random access memory (RRAM) was established based on the oxygen vacancy conduction mechanism. By resolving the partial differential equation for the coefficients, the variation process of the device resistance was simulated. In our studies, a device model was proposed which can accurately simulate the whole process of RRAM forming, reset, and set.