Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth.

In this study, the blue light-emitting diode (LED) structures based on gallium nitride (GaN) were presented. Each structure possessed a surface GaN p-n junction, which was formed through selective area regrowth on an InGaN/GaN multiple quantum well (MQW) structure and served as the carrier injector. The LEDs that showed efficient hole injection and current spreading were configured to form a p-type GaN layer between the MQW and regrown n-type GaN top layer.