Comparison of ZnO, AlO, AlZnO, and AlO-Doped ZnO Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structures.

In this study, ZnO, AlZnO, AlO, and AlO-doped ZnO-sensing membranes were fabricated in electrolyte-insulator-semiconductor (EIS) structures. Multiple material analyses indicate that annealing at an appropriate temperature of 500 °C could enhance crystallizations, passivate defects, and facilitate grainizations. Owing to their material properties, both the pH-sensing capability and overall reliability were optimized for these four types of membranes.

Effects of NH Plasma and Mg Doping on InGaZnO pH Sensing Membrane.

In this study, the effects of magnesium (Mg) doping and Ammonia (NH) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH plasma treatment could superpositionally enhance crystallization in fine nanostructures, and strengthen chemical bindings.